TFS 500 Thin Film System TFS 500 for ALD research and batch production

TFS 500  Thin Film System TFS 500 for ALD research and batch production

The TFS 500 can handle several types of substrates; wafers, planar objects, particles and porous bulk materials, as well as complex 3D objects with high aspect ratio features. It can further be equipped with a manually operated load lock for increased wafer processing capabilities. Different types of reaction chambers can easily be fitted inside the vacuum chamber, which in turn enables optimizing each reaction chamber for each customer application.

The TFS 500 meets both the stringent requirements of industrial reliability and the need for flexibility of R&D operations. Process components are off-the-shelf articles, which ensures spare parts availability. All precursor containers can easily be changed, at short notice. The precursor readiness includes gases, liquids and solid materials. For full flexibility in precursor selection, we have additionally included a 500 °C hot source option.

Performance highlights

• Process cycle time predominantly less than 2 seconds. In many cases, less than 1 second (with uniformity variation < ±1% for, e.g., Al₂O₃).
• Hot source versatility, up to 500 °C hot source setups as standard options
• Application-specific reaction chamber designs
• Direct and remote CCP plasma ALD as standard options
• Different reaction chambers available for, e.g., wafer, multiple wafer, 3D and powder substrates
• Modular design allows for easy change of reaction chambers, sources and tubing
• High deposition pressures possible for large surface area substrates
• Load lock with manual operation available for rapid substrate wafer change
• Hot-wall reaction chamber for uniform substrate temperature and to prevent precursor condensation and secondary reactions
• Cold-wall vacuum chamber for rapid heating and cooling
• Auxiliary entry ports in vacuum chamber for, in situ diagnostics etc.
• Clean-room compatible

Technical specifications:

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